发明名称 POWER SEMICONDUCTOR MODULE, METHOD FOR PRODUCING POWER SEMICONDUCTOR MODULE, AND SEMICONDUCTOR CHIP
摘要 <P>PROBLEM TO BE SOLVED: To provide a power semiconductor module, a method for producing the power semiconductor module, and a semiconductor chip, which improve reliability in the connection of soldering portions of the power semiconductor module. <P>SOLUTION: In the power semiconductor module, a copper-containing first soldering partner, connection layers 214, 14, 114, and a copper-containing second soldering partner are arranged successively and fixedly connected with one another. The connection layer has a portion of intermetallic copper-tin phases of at least 90% by weight. For producing such a power semiconductor module the soldering partners and the solder arranged there between are pressed against one another with a predefined pressure and the solder is melted. After termination of a predefined period of time the diffused copper and the tin from the liquid solder form a connection layer comprising intermetallic copper-tin phases. The portion of the connection layer is at least 90% by weight of the connection layer created from the solder layer. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008235898(A) 申请公布日期 2008.10.02
申请号 JP20080071259 申请日期 2008.03.19
申请人 INFINEON TECHNOLOGIES AG 发明人 GUTH KARSTEN;TORWESTEN HOLGER
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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