发明名称 |
METHOD FOR FORMING AlGaN CRYSTAL LAYER |
摘要 |
A method for preparing an AlGaN crystal layer with good surface flatness is provided. A surface layer of AlN is epitaxially formed on a c-plane sapphire single crystal base material by MOCVD method, and the resulting laminated body is then heated at a temperature of 1300° C. or higher so that a template substrate applying in-plane compressive stress and having a surface layer flat at a substantially atomic level is obtained. An AlGaN layer is formed on the template substrate at a deposition temperature higher than 1000° C. by an MOCVD method that includes depositing alternating layers of a first unit layer including a Group III nitride represented by the composition formula Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N (0<=x<=1) and a second unit layer including a Group III nitride represented by the composition formula Al<SUB>y</SUB>Ga<SUB>1-y</SUB>N (0<=y<=1 and y<>x) such that the AlGaN layer has a superlattice structure.
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申请公布号 |
US2008242060(A1) |
申请公布日期 |
2008.10.02 |
申请号 |
US20080051168 |
申请日期 |
2008.03.19 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
KOSAKA KEI;SUMIYA SHIGEAKI;SHIBATA TOMOHIKO |
分类号 |
H01L21/20;H01L33/04;H01L33/32 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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