| 摘要 |
A semiconductor device is provided to reduce a total size of an RF power module by forming a directional coupler in an inside of a semiconductor chip. A semiconductor chip includes a power amplifier circuit. The semiconductor chip includes (a) a semiconductor substrate(40), (b) a transistor, and (c) a directional coupler. The transistor is used for constituting the power amplifier circuit formed on the semiconductor substrate. The directional coupler detects output power of the power amplifier circuit. The directional coupler includes (c1) a main line as an output wire of the transistor, and (c2) a sub-line(32). The sub-line includes a first terminal and a second terminal. The first terminal is electrically coupled with a detector circuit for converting the output of the directional coupler into a voltage or current. The second terminal is electrically coupled with a GND through a passive element. The main line and the sub-line are arranged in parallel to each other. A conductor is not existed between the main line and the sub-line. |
