发明名称 |
Semiconductor light-emitting device |
摘要 |
A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1x10<SUP>7 (1/cm</SUP><SUP>2</SUP>) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.
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申请公布号 |
US2006170001(A1) |
申请公布日期 |
2006.08.03 |
申请号 |
US20060331290 |
申请日期 |
2006.01.12 |
申请人 |
SUZUKI JUN;DOI MASATO;BIWA GOSHI;OKUYAMA HIROYUKI |
发明人 |
SUZUKI JUN;DOI MASATO;BIWA GOSHI;OKUYAMA HIROYUKI |
分类号 |
H01L33/32;H01L33/40 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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