METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to enhance the reliability of the semiconductor device by preventing a breakdown of the semiconductor device due to local pressure. A fabric body is formed on a device substrate(101) including an active element. A composition including an organic resin is coated on the device substrate. A sealing layer(120,129) including the fabric body and the organic resin is formed by heating the device substrate. The fabric body is dipped into the organic resin. An insulating layer is formed to cover the active element. An antenna is formed in the device substrate. The device substrate is formed by using an SOI substrate. The active element is one or more elements of a MOS transistor, a non-volatile memory element, and a diode.