发明名称 LOW TEMPERATURE POLYCRYSTALLINE GROWTH
摘要 A low-temperature polycrystalline growth method is provided to enhance process efficiency by forming a polycrystalline thin film without performing an additional thermal process. A vacuum deposition process is performed to deposit Au on an upper surface of a substrate(110) to form an Au thin film(130) by crystallizing the Au. An upper thin film deposition process is performed to deposit a conductive material or a semiconducting material on an upper surface of the Au thin film in a vacuum deposition method. The deposited conductive material or the deposited semiconducting material are grown according to a shape corresponding to a crystalline structure of the crystallized Au thin film to form an upper thin film(140) of a crystalline state.
申请公布号 KR20080087628(A) 申请公布日期 2008.10.01
申请号 KR20070096707 申请日期 2007.09.21
申请人 UNIVERSITY OF ULSAN FOUNDATION FOR INDUSTRY COOPERATION 发明人 KIM, DAE IL;KIM, YU SUNG;PARK, JI HYE;LEE, JAE YOUNG;JANG, HO SUNG;CHOI, DAE HAN
分类号 H01L21/20;H01B5/14 主分类号 H01L21/20
代理机构 代理人
主权项
地址