发明名称 High power diode utilizing secondary emission
摘要 A high power diode includes a cathode for emitting a primary electron discharge, an anode, and a porous dielectric layer, e.g. a honeycomb ceramic, positioned between the cathode and the anode for receiving the primary electron discharge and emitting a secondary electron discharge. The diode can operate at voltages 50 kV and higher while generating an electron beam with a uniform current density in the range from 1 A/cm<SUP>2 </SUP>to >10 kA/cm<SUP>2 </SUP>throughout the area of the cathode. It is capable of repetitively pulsed operation at a few Hz with pulse duration from a few nanoseconds to more than a microseconds, while the total number of pulses can be >10<SUP>7 </SUP>pulses. The diode generates minimal out-gassing or debris, i.e. with minimal ablation, providing a greater diode lifetime, and can operate in a high vacuum environment of 10<SUP>-4 </SUP>Torr. The high power diode is useful in many applications requiring a high current electron beam. Exemplary applications include x-ray photography of large samples, polymerization processes, sterilization of biological and chemical agents, irradiation of food, and as a pump for lasers, e.g. excimer lasers such as krypton fluorine (KrF) lasers.
申请公布号 US7429761(B2) 申请公布日期 2008.09.30
申请号 US20040014458 申请日期 2004.12.17
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY 发明人 FRIEDMAN MOSHE;MYERS MATTHEW;HEGELER FRANK;SETHIAN JOHN
分类号 H01L29/74;H01L21/00;H01L29/861 主分类号 H01L29/74
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