| 发明名称 |
UV treatment for low-k dielectric layer in damascene structure |
| 摘要 |
An UV treatment for making a low-k dielectric layer having improved properties in a damascene structure. A low-k dielectric layer in a damascene structure is subjected to an UV treatment with He gas or H<SUB>2 </SUB>gas to eliminate etching damage to the exposed surfaces of the low-k dielectric layer.
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| 申请公布号 |
US7429542(B2) |
申请公布日期 |
2008.09.30 |
| 申请号 |
US20060404020 |
申请日期 |
2006.04.14 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
KO CHUNG-CHI;LIN KENG-CHU;BAO TIEN-I |
| 分类号 |
H01L21/26 |
主分类号 |
H01L21/26 |
| 代理机构 |
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代理人 |
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