发明名称 A METHOD OF DESIGNING A DEVICE WITH DUMMY FEATURES IN ACTIVE LAYERS
摘要 A design and method for fabricating devices with reduced loading effect is described. The disclosed design creates dummy features to increase the percentage of material remaining after etch of an active layer. This improves device reliability by preventing resist punch through during etch. Also, yields are improved as no devices are sacrificed to increase the percentage material remaining. Since dummy features are placed on all devices fabricated in a single production process, the percentage material remaining after etch is the same for all devices for a given layer. This allows the same recipe to be used for all devices fabricated by the process, thereby increasing throughput.
申请公布号 IL106466(D0) 申请公布日期 1993.11.15
申请号 IL19930106466 申请日期 1993.07.23
申请人 INTEL CORPORATION 发明人
分类号 H01L21/033;H01L23/522;H01L27/02;(IPC1-7):H01L/ 主分类号 H01L21/033
代理机构 代理人
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