| 摘要 |
A semiconductor memory device is provided to reduce the variation of termination resistance due to temperature variation. A temperature compensation voltage generation part(100) generates a temperature compensation voltage corresponding to temperature variation. An impedance matching part(200) supplies impedance corresponding to a pull-up control signal and a pull-down control signal, and compensates the variation of the impedance by using the temperature compensation voltage. The impedance matching part includes a pull-up part(210), a pull-down part(220) and a temperature compensation part(230). The pull-up part performs pull-up driving of an output stage in response to the pull-up control signal. The pull-down part performs pull-down driving of the output stage in response to the pull-down control signal. The temperature compensation part adjusts the impedance by changing a current according to the temperature compensation voltage. |
