| 摘要 |
A method for depositing an aluminum film is provided to improve characteristics of the semiconductor device by improving step coverage properties of CVD(Chemical Vapor Deposition) aluminum, thereby reliably filling in the semiconductor device, and a method for forming a contact of a semiconductor device using the method is provided. A method for forming a contact of a semiconductor device comprises the steps of: forming contact holes in an interlayer dielectric film(210) formed on a semiconductor substrate(200); depositing a first aluminum film(220) onto the semiconductor substrate by periodically repeating a step of injecting reaction gas comprising an aluminum precursor into a reaction chamber in which the semiconductor substrate has been loaded and a step of supplying reaction energy into the reaction chamber to pyrolyze the precursor; and a step of filling up the contact holes with a second aluminum film(230). The step of injecting the reaction gas into the reaction chamber is performed by maintaining temperature of the semiconductor substrate to room temperature. The step of supplying the reaction energy into the reaction chamber is performed by using a UV, plasma or infrared lamp, or using the rapid thermal process. The method further comprises a step of reflowing the second aluminum film by heat-treating the semiconductor substrate having the second aluminum film formed thereon after performing the step of forming the second aluminum film.
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