| 摘要 |
This invention provides a process for producing a silicon single crystal wafer, comprising pulling up a silicon single crystal ingot by a CZ process and subjecting a wafer taken off from the ingot to rapid heat treatment. In the production process, wafers taken off from ingots which have been previously pulled up with varied pull-up speeds are subjected to rapid heat treatment with varied heat treatment temperatures. Oxide film dielectric strength measurement is carried out to determine the relationship between the pull-up speed and heat treatment temperature and the results of oxide film dielectric strength measurement. Based on the relationship, conditions for pull-up speed and heat treatment temperature are determined so that, after the rapid heat treatment, the whole area in the radial direction is brought to an N region. Under the determined conditions, the pulling-up of an ingot and the rapid heat treatment are carried out to produce a silicon single crystal wafer. The above constitution can realize a production process that can efficiently and reliably produce a silicon wafer which can ensure a DZ layer in a wafer surface layer and can form an oxygen precipitate in a bulk region in the wafer. |
