发明名称 LIMITER AND SEMICONDUCTOR DEVICE USING THE SAME
摘要 By using a stacked gate transistor including a floating gate in a limiter, a threshold voltage Vth of the stacked gate transistor can be corrected by controlling the amount of charge accumulated in the floating gate of the stacked gate transistor even in the case where there are variations in the threshold voltage Vth of the stacked gate transistor.
申请公布号 EP1733429(A4) 申请公布日期 2008.09.24
申请号 EP20050730701 申请日期 2005.04.06
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KATO, KIYOSHI
分类号 H01L27/12;G06K19/07;G06K19/077;H01L21/77;H01L21/822;H01L21/84;H01L27/02;H01L27/04;H01L27/13;H01L29/786;H05K1/11 主分类号 H01L27/12
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