发明名称 |
LIMITER AND SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
By using a stacked gate transistor including a floating gate in a limiter, a threshold voltage Vth of the stacked gate transistor can be corrected by controlling the amount of charge accumulated in the floating gate of the stacked gate transistor even in the case where there are variations in the threshold voltage Vth of the stacked gate transistor. |
申请公布号 |
EP1733429(A4) |
申请公布日期 |
2008.09.24 |
申请号 |
EP20050730701 |
申请日期 |
2005.04.06 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KATO, KIYOSHI |
分类号 |
H01L27/12;G06K19/07;G06K19/077;H01L21/77;H01L21/822;H01L21/84;H01L27/02;H01L27/04;H01L27/13;H01L29/786;H05K1/11 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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