发明名称 Plasma species and uniformity control through pulsed VHF operation
摘要 <p>An apparatus for processing a substrate has a chamber (102), a high frequency power source (116), and a low frequency power source (118). The chamber has a first (104) and second (106) electrode disposed therein. The high frequency power source is electrically coupled to either the first or second electrode to supply a first RF signal. The low frequency power source electrically coupled to either the first or second electrode to supply a second RF signal. The first RF signal is pulsed on and off so as to enhance electron loss in the chamber.</p>
申请公布号 EP1973140(A2) 申请公布日期 2008.09.24
申请号 EP20080153090 申请日期 2008.03.20
申请人 APPLIED MATERIALS, INC. 发明人 PANAGOPOULOS, THEODOROS;TODOROV, VALENTIN N.;HATCHER, BRIAN K.;KATZ, DAN;HAMMOND IV., EDWARD P.;HOLLAND, JOHN P.;PATERSON, ALEXANDER
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项
地址