Plasma species and uniformity control through pulsed VHF operation
摘要
<p>An apparatus for processing a substrate has a chamber (102), a high frequency power source (116), and a low frequency power source (118). The chamber has a first (104) and second (106) electrode disposed therein. The high frequency power source is electrically coupled to either the first or second electrode to supply a first RF signal. The low frequency power source electrically coupled to either the first or second electrode to supply a second RF signal. The first RF signal is pulsed on and off so as to enhance electron loss in the chamber.</p>
申请公布号
EP1973140(A2)
申请公布日期
2008.09.24
申请号
EP20080153090
申请日期
2008.03.20
申请人
APPLIED MATERIALS, INC.
发明人
PANAGOPOULOS, THEODOROS;TODOROV, VALENTIN N.;HATCHER, BRIAN K.;KATZ, DAN;HAMMOND IV., EDWARD P.;HOLLAND, JOHN P.;PATERSON, ALEXANDER