发明名称 PLASMA PROCESSING APPARATUS AND STRUCTURE THEREIN
摘要 A plasma processing apparatus and a structure therein are provided to prevent a discharge from is generated by preventing a coating layer from being damaged. A plasma processing apparatus includes a member(100), an insulated coating layer(110), an insulated protective member(120), and an insulated layer(130). The member has at least first plane and a second plane. The insulated coating layer covers the first plane of the member. The insulated protective member covers the second plane and is composed of a material having a line expansion coefficient different from the member. The insulated layer is installed between the insulated coating layer and the protective member to separate the insulated coating layer from the insulated protective member. An insulated plane coats the first plane and the second plane by the insulated layer, the insulated protective member, and the insulated coating layer.
申请公布号 KR20080085764(A) 申请公布日期 2008.09.24
申请号 KR20080025408 申请日期 2008.03.19
申请人 TOKYO ELECTRON LIMITED 发明人 HIGUMA MASAKAZU;MUTO SHINJI
分类号 H05H1/24 主分类号 H05H1/24
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