| 摘要 |
A method for manufacturing a vertical type light emitting device is provided to minimize a contact area of a passivation layer and a substrate by forming a partition wall in a channel region. A semiconductor layer(20) is grown on a substrate(10). The semiconductor layer is etched so that a partition wall(40) of the semiconductor layer is formed on a unit device separation region of the semiconductor layer. A first electrode(60) is formed on the semiconductor layer. The substrate is separated from the semiconductor layer. A second electrode is formed on a surface of the semiconductor layer from which the substrate is separated. When the semiconductor layer is etched, the partition wall is connected on the unit device separation region. When the semiconductor layer is etched, a pair of trenches are formed in the unit device separation region. When the first electrode is formed, an ohmic electrode is formed. A reflective electrode is formed on the ohmic electrode. |
