| 摘要 |
A method for manufacturing a semiconductor device is provided to block the pattern collapse of a resist pattern by forming a gate pattern after a T-typed trench is fabricated. A gate oxide layer(110) and an insulating layer of a thickness 'a' are formed on a semiconductor substrate(100). The insulating layer is selectively etched by 'b'(0<b<a or 1/2a<b<a) to form a first insulating layer pattern(120a) of a thickness 'a' for defining a gate region and a second insulating pattern(120b) of a thickness 'c'(c=a-b). A spacer is formed on a sidewall of the first insulating layer pattern. The second insulating layer pattern is etched by using the spacer as a mask to expose the gate oxide layer. After the spacer is removed, a gate material layer is formed on the resultant structure. A planarization process is performed until the first insulating pattern is exposed to form a T-shaped gate pattern(160). The insulating layer is formed with an oxide layer.
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