| 摘要 |
A substrate processing apparatus using plasma is provided to improve thickness uniformity and etch uniformity of a layer formed on a substrate by forming a guiding member at an inner wall of a process chamber. A process chamber(210) includes a process space for processing a substrate. One or more gas injection nozzles(230) is arranged in an inner wall of the process chamber in order to inject a process gas into the inside of the process chamber. A plasma generation unit(240) generates the process gas as plasma. A plasma guiding member(250) of a ring structure is formed at the inner wall of the process chamber adjacent to the gas injection nozzle. The plasma guiding member is used for preventing leakage of plasma generated from the process chamber at an arranged part of the gas injection nozzle in order to concentrate the plasma on the substrate. The width of the plasma guiding member is shorter than the length of the gas injection nozzle in order to inject sufficiently the process gas from the gas injection nozzle to the substrate.
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