发明名称 METHOD FOR FORMING PATTERN
摘要 <p>A method for forming a pattern using a self-assembly monolayer is provided to pattern a conductive polymer having high conductivity by using a soft lithography manner instead of a photolithography process and a photoresist. A non-aqueous self-assembly monolayer(30) is formed on a substrate(10). An aqueous self-assembly monolayer(50) is formed on a region of the substrate except for the region on which the non-aqueous self-assembly monolayer is formed. A catalyzer layer is formed on the substrate on which the non-aqueous self-assembly monolayer and the aqueous self-assembly monolayer are formed. A conductive polymer layer(70) is formed on the non-aqueous and aqueous self-assembly monolayer. An insulating layer is formed between the substrate and the non-aqueous self-assembly monolayer. The insulating layer is an oxide layer. The non-aqueous self-assembly monolayer is made of an OTS(Octadecyltrichlorosilane)-based self-assembly monolayer. The aqueous self-assembly monolayer is made of a self-assembly monolayer having an amine group.</p>
申请公布号 KR20080085514(A) 申请公布日期 2008.09.24
申请号 KR20070027169 申请日期 2007.03.20
申请人 KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION 发明人 LEE, JAE GAB;PANG, IL SUN;PARK, HEE JUNG;KIM, SUNG SOO
分类号 H01L21/027;H01L29/786 主分类号 H01L21/027
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