<p>A method for forming a pattern using a self-assembly monolayer is provided to pattern a conductive polymer having high conductivity by using a soft lithography manner instead of a photolithography process and a photoresist. A non-aqueous self-assembly monolayer(30) is formed on a substrate(10). An aqueous self-assembly monolayer(50) is formed on a region of the substrate except for the region on which the non-aqueous self-assembly monolayer is formed. A catalyzer layer is formed on the substrate on which the non-aqueous self-assembly monolayer and the aqueous self-assembly monolayer are formed. A conductive polymer layer(70) is formed on the non-aqueous and aqueous self-assembly monolayer. An insulating layer is formed between the substrate and the non-aqueous self-assembly monolayer. The insulating layer is an oxide layer. The non-aqueous self-assembly monolayer is made of an OTS(Octadecyltrichlorosilane)-based self-assembly monolayer. The aqueous self-assembly monolayer is made of a self-assembly monolayer having an amine group.</p>
申请公布号
KR20080085514(A)
申请公布日期
2008.09.24
申请号
KR20070027169
申请日期
2007.03.20
申请人
KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
发明人
LEE, JAE GAB;PANG, IL SUN;PARK, HEE JUNG;KIM, SUNG SOO