发明名称 Charge pump-type booster circuit
摘要 Provided is a charge pump circuit whose power efficiency is not reduced even when a threshold voltage of a transistor is increased by a substrate effect with an increase in the number of stages. A depletion transistor is used as an N-channel transistor included in an inverter of a high-voltage clock generating circuit. A P-channel enhancement transistor is used as a charge transfer device.
申请公布号 US7427891(B2) 申请公布日期 2008.09.23
申请号 US20070709915 申请日期 2007.02.22
申请人 SEIKO INSTRUMENTS INC. 发明人 SAKURAI ATSUSHI;SATO YUTAKA
分类号 G05F1/10 主分类号 G05F1/10
代理机构 代理人
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