| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device wherein substrates can be connected with each other only under a low pressure without applying ultrasonic waves or heating. <P>SOLUTION: The method of manufacturing a semiconductor device according to the invention is characterized by including: preparing a first substrate having a plurality of first electrodes and a second substrate having a plurality of electrodes; forming first bumps on the first electrodes by a wire bonding process; forming second bumps on the second electrodes by a plating process; adjusting elastic moduli so that the difference between the elastic modulus of the first bumps and that of the second bumps may be 500kdf/mm<SP>2</SP>or less; positioning the first and second substrates so that the first and second bumps may be in contact in a manner opposed to each other; and applying pressure so that the first and second bumps may be electrically connected with each other. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
