| 摘要 |
PURPOSE:To obtain the high velocity and high integrity bipolar transistor by laminating an n<->-type collector withstand voltage layer and a p-type base layer on an n<+>-type buried collector layer on a p-type substrate and forming an n<+>-type emitter layer in a base layer isolated by a V-shaped groove reaching the substrate. CONSTITUTION:An n<+>-type layer 2 is selectively formed on a p<->-type substrate 1, and a p-type layer 3 is coated thereon. An n<->-type epitaxial layer 4 and a p-type layer 5 are laminated thereon, and an n<+>-type layer 6 is selectively formed thereon. An SiO2 mask is coated on the surface thereof and anisotropically etched to form a V-shaped groove 8 reaching a channel stopper 3. The mask is then removed, SiO2 films 7A, 7B are newly formed thereon, electrodes 9E-9C are attached thereto, and the collector electrode 9C is connected directly to the buried collector 2 to be formed on the bottom surface of oblique surface of the V-shaped groove 8. This configuration can reduce the resistance of the collector, form the base layer in a self-alignment, and can thus form a bipolar transistor of low area with small parasitic capacity and accordingly high speed operation. |
