| 摘要 |
This invention is directed to offer a semiconductor device having a stacked layer structure and its manufacturing method that bring high yield and reliability. Semiconductor dice judged as good dice are stacked on a base substrate in which through holes and through hole electrodes are formed. Next, a protection layer to cover the semiconductor dice is formed. It is preferable that the protection layer is composed of a plurality of resin layers (a first resin layer and a second resin layer) that are different in hardness from each other. Then, a conductive terminal that is connected with the through hole electrode is formed on a back surface of the base substrate. Next, the second resin layer and the base substrate are cut along predetermined dicing lines and separated into individual semiconductor devices in chip form. As described above, a process step of separation into the semiconductor devices is performed while each of the semiconductor dice is mounted on the base substrate in wafer form.
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