| 发明名称 |
SEMICONDUCTOR DEVICE HAVING FIRST ELECTRODE AND SECOND ELECTRODE AND ITS MANUFACTURING METHOD |
| 摘要 |
<p>An IGBT (91) comprises a substrate (S), an emitter electrode (17) formed on the upper surface (Sa) side of the substrate (S), a collector electrode (15) formed on the lower surface (Sb) side of the substrate (S), a control mechanism (a p-type base region (7), an n<SUP>+</SUP> impurity region (11), an insulating film (13), and a gate electrode (19)). An n<SUP>-</SUP> drift region (1) is formed in the substrate (S). This makes it possible to reduce on-resistance.</p> |
| 申请公布号 |
WO2008111269(A1) |
申请公布日期 |
2008.09.18 |
| 申请号 |
WO2007JP73033 |
申请日期 |
2007.11.29 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;FUJIKAWA, KAZUHIRO;HOSHINO, TAKASHI |
发明人 |
FUJIKAWA, KAZUHIRO;HOSHINO, TAKASHI |
| 分类号 |
H01L29/12;H01L21/28;H01L21/337;H01L29/41;H01L29/423;H01L29/49;H01L29/739;H01L29/749;H01L29/78;H01L29/80;H01L29/808;H01L29/861 |
主分类号 |
H01L29/12 |
| 代理机构 |
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