| 摘要 |
The invention intends to provide a dielectric porcelain composition for use in electronic devices, which has the dielectric characteristics such that the Qf value is high, the temperature coefficient tauf of a resonant frequency is small and a value thereof can be controlled in a wide range in positive and negative directions in the vicinity where the relative dielectric constant epsilonr is 39. According to the invention, when, in La-Pr-Al-Ga-Sr-Ti-based oxide dielectric porcelain, contents of the respective elements are limited to be within particular ranges and Sr is partially substituted by Ca, a structure having a (1-x)(La<SUB>1-y</SUB>Ln<SUB>y</SUB>)(Al<SUB>1-z</SUB>Ga<SUB>z</SUB>)O<SUB>3</SUB>-x(Sr<SUB>1-m</SUB>Ca<SUB>m</SUB>)TiO<SUB>3 </SUB>solid solution as a main phase, in which a solid solution of Al-Ga-Sr-based oxide and/or a solid solution of Al-Ga-based oxide and a Sr oxide is/are precipitated in a grain boundary thereof, can be obtained, whereby the above-mentioned object can be achieved.
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