STRUCTURE AND METHOD FOR SELF PROTECTION OF POWER DEVICE

摘要

A resetable over-current self-protecting semiconductor power device comprises a vertical power semiconductor chip and an over-current protection layer composed of current limiting material such as a PTC material. The over- current protection layer may be sandwiched between the vertical power semiconductor chip and a conductive plate, which could be a leadframe, a metal plate, a PCB plate or a PCB that the device is mounted on.