| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device that has an efficient layout configuration and is provided with a CMOS region which has no variation and whose characteristics are further improved compared with a PMOS formed on a (100) face substrate. SOLUTION: The semiconductor device is provided with a (100) face substrate 1, a (110) face crystal layer 10 partially formed on the (100) face substrate 1, a plurality of NMOSs 21 arranged on the (100) face substrate 1 in a direction of perpendicularly intersecting with a channel, and a plurality of PMOSs 22 arranged on the (110) face crystal layer 10 in a direction of perpendicularly intersecting with a channel. The (110) face crystal layer 10 is configured so that its crystal orientation <110> direction is in a direction of being rotated by 45 degrees in a plane view with respect to a crystal orientation <110> direction of the (100) face substrate 1. A plurality of the NMOSs 21 and a plurality of the PMOSs 22 are respectively configured so that a channel direction is arranged in the crystal orientation <110> direction of the (100) face substrate 1 and in a direction perpendicular to the crystal orientation <110> direction of the (100) face substrate 1. COPYRIGHT: (C)2008,JPO&INPIT |
