RAPID PHOTOCONDUCTOR

摘要

The invention relates to a photoconductor comprising a layered stack (72) with a semiconductor layer (64) that is photoconductive for a predetermined wavelength range and that lies between two semiconductor barrier layers (62), which have a greater band distance than the photoconductive semiconductor layer (64), on a substrate (60). The semiconductor barrier layers (62) have deep point defects for receiving and recombining free charge carriers from the photoconductive layer (64) and two electrodes which are connected to the photoconductive semiconductor layer (64) to provide a lateral current flow between the electrodes through the photoconductive semiconductor layer (64).