| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of reducing the fault of elements to be formed on a bulk region. SOLUTION: The manufacturing method includes: a step of forming an amorphous- or polysilicon-structure Si layer 9 on an Si substrate 1 of the bulk region and exposing an SOI region from the lower part of the Si layer 9; a step of forming an SiGe layer 11 and an Si layer 13 on the Si substrate 1 of the SOI region and the bulk region by an epitaxial growth method after forming the Si layer 9; a step of partially etching the Si layer 13 and the SiGe layer 11 to form a groove for exposing the side surface of the SiGe layer 11 of the SOI region; a step of forming a cavity portion between the Si substrate 1 and the Si layer 13 of the SOI region by performing wet etching of the SiGe layer 11 with a nitrohydrofluoric acid solution via the groove; and a step of forming an SiO<SB>2</SB>film in the cavity portion. COPYRIGHT: (C)2008,JPO&INPIT
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