发明名称 Flash memory and method for checking status register by block unit
摘要 Provided is a test method of a NAND flash memory. The method includes programming a page of a selected memory block in the flash memory; accumulating a program result of the page; and repeating the programming of other pages and the accumulating of the program result of the other pages until all pages in the selected memory block are programmed.
申请公布号 US2008225598(A1) 申请公布日期 2008.09.18
申请号 US20080075398 申请日期 2008.03.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG JIN-SUNG;KIM JONG-KOOK
分类号 G11C16/34;G11C29/44 主分类号 G11C16/34
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