发明名称 |
FERROELECTRIC RECORDING MEDIUM AND WRITING METHOD FOR THE SAME |
摘要 |
A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
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申请公布号 |
US2008225678(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20080128788 |
申请日期 |
2008.05.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KO HYOUNG-SOO;KIM EUN-SIK;KIM SUNG-DONG;JUNG JU-HWAN;PARK HONG-SIK;PARK CHUL-MIN;HONG SEUNG-BUM |
分类号 |
G11B7/00 |
主分类号 |
G11B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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