发明名称 DEVICE FOR PROCESSING RESIST PATTERN, AND METHOD OF PROCESSING RESIST PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a device for processing a resist pattern and a method of processing a resist pattern which are adapted that can realize uniform and high-precision thinning of the line width of a resist pattern arranged on a substrate, using a low cost and easy technique. SOLUTION: The device for processing a resist pattern 1 is provided with a stage 12 for mounting a substrate 10 having a patterned photoresist R disposed on a surface; an ultraviolet irradiating section 14 for projecting an ultraviolet beam to the stage 12; and an annular member 16 that surrounds the entire periphery of the substrate 10. By doing so, the annular member 16 restrains ozone which is supplied in proximity to a mounting surface S for mounting the substrate10 on the stage 12, from diffusing to the periphery of the stage, thereby the ozone concentration in the surface of the substrate 10 mounted on the stage 12 becomes uniform. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008218971(A) 申请公布日期 2008.09.18
申请号 JP20070298322 申请日期 2007.11.16
申请人 TDK CORP 发明人 HADATE HITOSHI;UEJIMA SATOSHI
分类号 H01L21/027;G03F7/40;H01L21/3065 主分类号 H01L21/027
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