发明名称 Gate dielectric structures, organic semiconductors, thin film transistors and related methods
摘要 Gate dielectric structures comprising an organic polymeric component, and organic semiconductor components, as can be used to fabricate thin film transistor devices.
申请公布号 US2008224127(A1) 申请公布日期 2008.09.18
申请号 US20070895000 申请日期 2007.08.22
申请人 MARKS TOBIN J;FACCHETTI ANTONIO;YOON MYUNG-HAN 发明人 MARKS TOBIN J.;FACCHETTI ANTONIO;YOON MYUNG-HAN
分类号 H01L51/40;H01L51/00 主分类号 H01L51/40
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