| 摘要 |
A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.
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