| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic transistor that has an excellent mobility, an excellent on/off ratio, an excellent threshold voltage, and less variation in characteristics thereof. SOLUTION: The organic transistor 1 comprises: a first semiconductor region 131 provided on a region S1 facing a gate electrode 15 and a source electrode 11; a second semiconductor region 132 provided on a region S2 facing the gate electrode 15 and a drain electrode 12; and a third semiconductor region 133 provided on a region S3 between the first semiconductor region 131 and the second semiconductor region 132. Assuming that an average value of the thickness of the first semiconductor region 131 is W1, that of the second semiconductor region 132 is W2, and that of the third semiconductor region 133 is W3, the relationship is satisfied that W1 and W2 are smaller than W3. COPYRIGHT: (C)2008,JPO&INPIT
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