发明名称 |
Termination trench structure for mosgated device and process for its manufacture |
摘要 |
A process for the fabrication of a MOSgated device that includes a plurality of spaced trenches in the termination region thereof.
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申请公布号 |
US2008227269(A1) |
申请公布日期 |
2008.09.18 |
申请号 |
US20080011290 |
申请日期 |
2008.01.25 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
MA LING |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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