| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming an insulation film which is excellent in film properties such as permittivity and Young's modulus, capable of forming a film having a proper uniform thickness and suitable for using as an interlayer insulation film of semiconductor devices and the like. SOLUTION: The composition is formed by dissolving a cage type silsesquioxane compound in an organic solvent at a concentration of≤12 mass%, which silsesquioxane compound has two or more unsaturated groups as substituents, and polymerizing the compound by using a polymerization initiator, wherein the composition is characterized by containing a polymer provided by polymerizing≥70% of the compound and the polymerization initiator is preferably an azo compound. COPYRIGHT: (C)2008,JPO&INPIT
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