| 摘要 |
<p>A semiconductor device comprising a semiconductor substrate and, superimposed thereon, a ferroelectric capacitor, wherein the ferroelectric capacitor is composed of an inferior electrode, a ferroelectric film and a superior electrode, and wherein the superior electrode includes at least a first conductive film of first conductive noble metal oxide and, superimposed thereon, a second conductive film of metal nitride compound, and wherein between the first conductive film and the second conductive film, there are interposed a third conductive film of second conductive noble metal oxide and a fourth conductive film of noble metal.</p> |
