发明名称 |
METHOD FOR FORMING Cu FILM |
摘要 |
As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a nitride film by sputtering method. A Cu film is then formed on the nitride film by CVD method and thereafter anneal processing is performed at 100 to 400°C. In this manner, by forming the Cu film, the adhesiveness between the barrier metal film and the Cu film improves. |
申请公布号 |
EP1970947(A1) |
申请公布日期 |
2008.09.17 |
申请号 |
EP20060833944 |
申请日期 |
2006.12.04 |
申请人 |
ULVAC, INC. |
发明人 |
YOSHIHAMA, TOMOYUKI;HARADA, MASAMICHI;TOYODA, SATORU;USHIKAWA, HARUNORI |
分类号 |
H01L21/768;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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