| 摘要 |
<p>A thin film transistor, an organic light emitting display device comprising the same, and a manufacturing method of the same organic light emitting display device are provided to reduce the number of patterning processes by patterning simultaneously a pixel defining layer and a spacer. A gate electrode(120) is arranged on a substrate(110). A gate insulating layer(112) is arranged on the substrate in order to cover the gate electrode. A semiconductor layer(130) includes a channel region, a doping region, and a non-doping region and is arranged on the gate insulating layer. Source and drain electrodes(141,142) are formed on the non-doping region in order to expose the doping region. A planarization layer(113) is arranged on the gate insulating layer, the source/drain electrodes, and the channel electrode and includes an opening to expose a part of the doping region and the source/drain electrodes. A conductive layer(151) is arranged at the opening and comes in contact with the doping region and one of the source/drain electrodes. A pixel electrode(152) is arranged on the opening and the planarization layer and comes in contact with the rest of the doping region and the source/drain electrodes.</p> |
