A METHOD FOR FABRICATING A HIGH-K DIELECTRIC LAYER
摘要
<p>One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.</p>
申请公布号
EP1969619(A1)
申请公布日期
2008.09.17
申请号
EP20060822407
申请日期
2006.10.20
申请人
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (IMEC);PANASONIC CORPORATION