发明名称 |
SELF-ALIGNED TRENCH FIELD EFFECT TRANSISTORS WITH REGROWN GATES AND BIPOLAR JUNCTION TRANSISTORS WITH REGROWN BASE CONTACT REGIONS AND METHODS OF MAKING |
摘要 |
Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self-aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide. |
申请公布号 |
EP1969617(A1) |
申请公布日期 |
2008.09.17 |
申请号 |
EP20060838892 |
申请日期 |
2006.12.04 |
申请人 |
SEMISOUTH LABORATORIES, INC. |
发明人 |
MERRETT, JOSEPH, NEIL;SANKIN, IGOR |
分类号 |
H01L21/04;H01L29/737;H01L29/808 |
主分类号 |
H01L21/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|