| 摘要 |
PURPOSE: A nonvolatile ferroelectric memory device and manufacturing method therefor are provided to enlarge an area of a capacitor so that a capacitance is increased, and to easily design a layout so that a manufacturing processes are easily performed. CONSTITUTION: The device includes the first and the second split word lines(SWL1,SWL2), the first and the second bit lines(B/L1,B/L2), the first transistor(T1), the first ferroelectric capacitor(FC1), the second transistor(T2) and the second ferroelectric capacitor(FC2). The first and the second split word lines(SWL1,SWL2) are formed to a row direction with a predetermined gap. The first and the second bit lines(B/L1,B/L2) are formed to cross the first and the second split word lines(SWL1,SWL2). As the first transistor(T1), a gate is connected to the first split word line(SWL1), and a drain is connected to the first bit line(B/L1). The first ferroelectric capacitor(FC1) is connected between a source of the first transistor(T1) and the second split word line(SWL2). As the second transistor(T2), a gate is connected to the second split word line(SWL2), and a drain is connected to the second bit line(B/L2). The second ferroelectric capacitor(FC2) is connected between a source of the second transistor(T2) and the first split word line(SWL1).
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