发明名称 BACKSIDE RAPID THERMAL PROCESSING OF PATTERNED WAFERS
摘要 Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.
申请公布号 KR100858757(B1) 申请公布日期 2008.09.16
申请号 KR20067020041 申请日期 2006.09.27
申请人 发明人
分类号 H01L21/324;F26B19/00;F27B5/14;F27B17/00;F27D11/00;F27D19/00;F27D21/00;H01L21/00;H01L21/477 主分类号 H01L21/324
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