| 摘要 |
A semiconductor device with p-channel MOS transistor having: a gate insulating film (13) of nitrogen-containing silicon oxide; a gate electrode (14) of boron-containing silicon; side wall spacers on side walls of the gate electrode, comprising silicon oxide; an interlayer insulating film (21) having a planarized surface; a wiring trench and a contact via hole formed in the interlayer insulating film; a copper wiring pattern (27) including an underlying barrier layer (26) and an upper level copper region, and filled in the wiring trench; and a silicon carbide layer (29) covering the copper wiring pattern. A semiconductor device has the transistor structure capable of suppressing NBTI deterioration. |
