| 摘要 |
<p>An electronic device (10) including a multi-gate electrode structure overlying the channel region (32) further comprising a first (52) and second (24) gate electrode spaced apart from each other by a layer (42), and a process for forming the electronic device (10) is disclosed. The multi-gate electrode structure (52, 24) can have a sidewall spacer structure (62) having first and second portions. The first (52) and second (54) gate electrodes can have different conductivity types. The electronic device (10) can also include a first gate electrode (52) of a first conductivity type overlying the channel region, a second gate electrode (24) of a second conductivity type lying between the first gate electrode (52) and the channel region (32), and a first layer (42) capable of storing charge lying between the first gate electrode (52) and the substrate (18).</p> |
