MASK AND METHOD FOR MANUFACTURING A POLY SILICON SUBSTRATE USING THE SAME

摘要

A mask and a poly silicon substrate manufacturing method using the same are provided to manufacture a poly silicon substrate by forming first and second slits of a wave shape in the mask, thereby forming particle boundary lines of a wave shape on the poly silicon substrate and preventing moire. Plural first slits(410) are formed in a wave shape, and spaced from each other in parallel at predetermined intervals. Plural second slits(420) are formed in an area adjacent to the first slits so as to correspond to a space between the first slits, and formed in the same shape as the first slit. The first and second slits have the same width. The first slit has a sine wave shape.