发明名称 SOLID-STATE IMAGING DEVICE
摘要 A solid-state imaging device including: a plurality of photodiode parts ( 1 ); a plurality of vertical charge transfer parts ( 2 ) each of which reads out a signal charge and transfers the signal charge in a vertical direction; and a plurality of shade films ( 5 ) that have conductivity, which supplies a transfer pulse via the shade film ( 5 ), is used. The vertical charge transfer parts ( 2 ) respectively have transfer channels ( 13 ) and transfer electrodes ( 3 ). The shade film ( 5 ) is formed above the corresponding vertical charge transfer part ( 2 ) via an insulation layer ( 21 ) that insulates the shade film ( 5 ) from the transfer electrodes ( 3 ). The insulation layer ( 21 ) has a thick part ( 8 ) in a part of the insulation layer ( 21 ) where the shade film ( 5 ) is overlapped on a side of the photodiode part ( 1 ) that is a subject to be read out by the vertical charge transfer part ( 2 ).
申请公布号 US2008210983(A1) 申请公布日期 2008.09.04
申请号 US20070854077 申请日期 2007.09.12
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YAMADA TOHRU;ICHIKAWA MICHIYO;HONJO MAMORU;NAKAGAWA ATSUO
分类号 H01L27/148;H01L27/14;H04N5/335;H04N5/357;H04N5/369;H04N5/3728 主分类号 H01L27/148
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