发明名称 |
SOLID-STATE IMAGING DEVICE |
摘要 |
A solid-state imaging device including: a plurality of photodiode parts ( 1 ); a plurality of vertical charge transfer parts ( 2 ) each of which reads out a signal charge and transfers the signal charge in a vertical direction; and a plurality of shade films ( 5 ) that have conductivity, which supplies a transfer pulse via the shade film ( 5 ), is used. The vertical charge transfer parts ( 2 ) respectively have transfer channels ( 13 ) and transfer electrodes ( 3 ). The shade film ( 5 ) is formed above the corresponding vertical charge transfer part ( 2 ) via an insulation layer ( 21 ) that insulates the shade film ( 5 ) from the transfer electrodes ( 3 ). The insulation layer ( 21 ) has a thick part ( 8 ) in a part of the insulation layer ( 21 ) where the shade film ( 5 ) is overlapped on a side of the photodiode part ( 1 ) that is a subject to be read out by the vertical charge transfer part ( 2 ).
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申请公布号 |
US2008210983(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
US20070854077 |
申请日期 |
2007.09.12 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMADA TOHRU;ICHIKAWA MICHIYO;HONJO MAMORU;NAKAGAWA ATSUO |
分类号 |
H01L27/148;H01L27/14;H04N5/335;H04N5/357;H04N5/369;H04N5/3728 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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