| 摘要 |
A first relationship between the charge dose of a charged beam writing apparatus and the dimensional accuracy of a photomask pattern is obtained, and a charge dose is determined from given dimensional accuracy on the basis of the first relationship. On the basis of the determined charge dose, a resist by which a resist pattern having desired dimensions is formed with the charge dose is selected. A second relationship between the write condition of the charged beam writing apparatus and the write time necessary to write the selected resist with the charge dose is obtained for each write pattern. The write condition is determined for each write pattern on the basis of a condition given to the write time and the second relationship.
|
