KORREKTUR DES PROXIMITY EFFEKTS (NAHEFFEKTS) BEI MUSTERN MIT MITTLEREM ABSTAND MITTELS NICHT AUFGELÖSTER HILFSSTRUKTUREN

摘要

A method for providing scattering bars for optical proximity effect correction on a mask used in a lithographic process. Scattering bar spacing and characteristics are adjusted and varied along with primary feature edge location in order to control CD's of features that are spaced a distance greater than the minimum pitch of a lithographic process but less than a nominal distance for two feature edges having independent scattering bars.